By Richard C. Alkire, Dieter M. Kolb, Heinz Gerischer, Charles W. Tobias

Like its predecessors, quantity 3 of this in the meantime well-established sequence covers chosen subject matters from electrochemical technological know-how and its purposes. The authors were rigorously chosen one of the leaders within the respective fields. Their authoritative and entire contributions symbolize the most recent cutting-edge. specific realization is paid to contemporary advancements, that are severely and punctiliously mentioned. each one contribution of the current quantity keeps the excessive criteria of this sequence. This new sequence has been warmly welcomed via scientists world-wide, that is mirrored by means of the next evaluate of the second one quantity: 'All the contributions during this quantity are good as much as the traditional of this glorious sequence and may be of significant price to electrochemists... The editors back should be congratulated in this superb selection of reviews.' magazine of Electroanalytical Chemistry and Interfacial Chemistry

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6 -0 4 -0 2 - Electrochemistry of I11 -V Compound Semiconductors 39 none of the species in solution can possibly inject electrons into the conduction band of GaP, the electron injection current in the presence of Br, is attributed to the presence of decomposition intermediates of Gap, which are formed in reaction (63) and which can inject electrons into Gap, similarly to the intermediates formed by anodic decomposition (see Sec. 3). This indication of the presence of such intermediates contradicts the concerted etching mechanism formerly proposed for the GaAs etching by symmetrical bifunctional molecules, such as Br,, H202, and 1, [38].

The etching kinetics depend upon the CrO,/HF concentration ratio; at a low ratio, the etching rate is limited by diffusion of Cr(V1) from solution, while at high values, the etching is kinetically controlled and depends only on the HF concentration. 11- 36 W. P. Gomes and H. H. Goossens lumination considerably enhances the dissolution rate of n-GaAs but has no effect on that of p-GaAs. The authors present quite a complex etching model to account for these facts, in which the oxidative dissolution of GaAs and the reduction of the oxidizing agent Cr(V1) are not totally independent partial reactions, but are linked to each other through the GaAs decomposition intermediate X, (see Sec.

The i-V behavior is shown schematically in Fig. , the hole injection rate, is the same over the entire surface. 3 mol PI), the overall etching rate at n-type ( i i i ) GaP is limited by the OH- diffusion rate. Schematic i- V curves are shown in Fig. 13 d, in which the anodic partial current density reaches its OH- diffusion limit. A flat surface is formed, analogously to the diffusion-limited, photoanodically etched surfaces (Fig. 1 (n) (b), region 11). In summary, the interpretation of the morphology of electroless etching processes at GaP is analogous to the proposed interpretation of (photo)anodic etching.

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