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A) (b) Figure 28. 5voltsvs. SiC. Deposition time, 3 hrs. 4 volts for 30 mins (76). Electrochemical Deposition of Semiconductors 47 long-term deposition stability were found, attempts to produce thick layers were hampered by delamination of the seed crystals. 0 CONCLUSION It has been demonstrated that most of the technologically important semiconductors can be synthesized and deposited as thin films by electrolysis techniques. By far, the greatest amount of effort has gone into the development of electrodeposition methods for low cost silicon solar cells.

66 volts. Films were easily grown on substrates shorted to both aluminum and cadmium foils. 4 eV. EDAX measurements showed that the films, as deposited, had aCd:Te ratioof 25:60. Annealing the films for 30 min. at 59OoCchanged the ratio to 55:45. X-ray data provided more evidence for compositional changes on annealing. Films, as deposited, contained CdTe in both the hexagonal and cubic forms as well as hexagonal Te. After annealing,only the hexagonalform of CdTe remained:there was no free Te. The films exhibited photoelectrochemical behavior.

And Reddy, A. K. , M o d e r n €lectrochemistry, Plenum Publishing Corporation (1970) 8. Despic, A. P. and Popov, K. , Transport-Controlled Deposition and Dissolution of Metals, M o d e r n Aspects of €/ectrochemistry, (B. Conway and J. O’M. ), 7:99 (1972) 9. Despic, A. , Diggle, J. and Bockris, J. , J . Electrochem. SOC. 1 15:507 ( 1 968) 10. Kroll, W. , Trans. €lectrochem. 87:551 (1945) 1 1 . , Compt. Rend. Acad. Sci. Paris 39:323 (1854) 12. , Chimia 37:109 (1983) 13. , Phil. Mag. 7:227 (1854) 14.

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