By Ulrich L. Rohde
Written for an viewers of RF microwave engineers and graduate-level scholars, this article covers vital elements of oscillator improvement: from basics, gadget & board expertise, offer noise, research equipment, layout, and optimization methodologies, to sensible layout of varied unmarried and paired oscillators. With an emphasis on systematic composition of the complete layout technique, chapters comprise transistor types, large-signal S-parameters, resonator offerings, calculation & optimization of noise in oscillators, validation circuits for wideband resonator VCOs, and extra. wide appendices convey particular examples, calculations, designs, and CAD suggestions.
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Extra resources for Design of Modern Microwave Oscillators for Wireless Applications: Theory and Optimization
Sample text
They were developed from the MOS model by adding a diode at the gate and removing the MOS capacitor at the input. Today, there are many GaAs models believed by individual researchers to have big advantages. These models are used to describe the behavior of the transistors over a wide frequency, temperature, and bias range. Their accuracy varies. The most important factors are the input parameters, which are obtained from a process called parameter extraction. Given the long-term use of CAD tools, it appears that a majority of the discrepancies between measured and modeled results can be explained by a lack of accuracy stemming from parameter extraction.
For the purpose of this work, the Infineon transistor BFP520 was chosen. It is well documented and has a high enough operating frequency. Figures 3-2 to 3-5 and Table 3-1 reproduce the manufacturer’s data. BFP520 NPN Silicon RF Transistor . . . 95 dB For oscillators up to 15 GHz Transition frequency fT ¼ 45 GHz Gold metalization for high reliability SIEGET 45-Line 45 GHZ fT –Line Noise figure F = f (IC) Source impedance for min. VCE = 2 V, Zs = ZSopt noise figure vs. 0 0 5 10 15 20 25 30 35 40 IC (mA) Figure 3-4 Noise figure and source impedance for the best noise figure as a function of current and frequency of the Infineon transistor BFP520.
Tuning this circuit will alter the conditions for optimal phase noise and requires additional tunable elements to achieve optimal performance. 5 THREE APPROACHES TO DESIGNING MICROWAVE OSCILLATORS 19 Figure 2-10 Six different configurations which can be based on either bipolar transistors or FETs. Some modern microwave oscillators are built around the Colpitts and Clapp oscillator circuits [15]. A second design approach is the two-port approach. Now the transistor is used as a two-terminal device, with the third terminal at ground and its tuned circuit as a feedback element that determines the frequency, as shown in Figure 2-12.
